Residual Stress Measurement for Ion-implanted NiTi Alloy by Using Moir  Interferometry and Hole-dril Residual Stress Measurement for Ion-implanted NiTi Alloy by Using Moir  Interferometry and Hole-dril

Residual Stress Measurement for Ion-implanted NiTi Alloy by Using Moir Interferometry and Hole-dril

  • 期刊名字:中国航空学报(英文版)
  • 文件大小:
  • 论文作者:WANG Qiang,WANG Biao,MA De-cai
  • 作者单位:School of Astronautics,College of Physical Science and Technology,State Key Laboratory of Optoelectronic Materials and T
  • 更新时间:2022-11-24
  • 下载次数:
论文简介

Residual stresses in ion-implanted NiTi alloy are measured by a combined method of Moiré interferometry and hole-drilling. Oxygen ions are implanted into the NiTi alloy under a voltage of 30 kV by a dose of 1.0×1017 ions/cm2 for one hour. Subsequently, in order to avoid dimensional error, a hole is drilled exactly in the center of the sample. The distribution of residual stresses around the hole is measured. It is indicated that the method which combines the Moiré interferometry with hole-drilling is able to be used to measure residual stresses produced by ion implantation.

论文截图
版权:如无特殊注明,文章转载自网络,侵权请联系cnmhg168#163.com删除!文件均为网友上传,仅供研究和学习使用,务必24小时内删除。