Photocurrent Measurement of Si1-xGex/SiMultiple Quantum Wells With Ion Implantation and Thermal Anne

Si-Ge interdiffusion in Si1-xGex/Si multiple quantum-wells (MQW) is investigated by photocurrent spectroscopy, which is induced by ion implantation of Si+ and thermal annealing. The band gap energy of the Si1-xGex/Si samples implanted plus annealed has a blue shift up to 97meV compared to the annealed-only samples. The blue shift may be caused by the SiGe interdiffusion and the relaxation of the SiGe quantum wells.