Large Aperture Low Threshold Current 980 nm VCSELs Fabricated with Pulsed Anodic Oxidation Large Aperture Low Threshold Current 980 nm VCSELs Fabricated with Pulsed Anodic Oxidation

Large Aperture Low Threshold Current 980 nm VCSELs Fabricated with Pulsed Anodic Oxidation

  • 期刊名字:光机电信息
  • 文件大小:
  • 论文作者:CUI Jin-jiang,NING Yong-qiang,
  • 作者单位:Key Laboratory of Excited State Processes,Graduate School of Chinese Academy of Sciences
  • 更新时间:2023-02-15
  • 下载次数:
论文简介

Pulsed anodic oxidation technique, a new way of forming current blocking layers, was successfully used in ridge-waveguide QW laser fabrication. This method was applied in 980 nm VCSELs fabrication to form a high-quality native oxide current blocking layer, which simplifies the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500 μm diameter device has a current threshold as low as 048 W. The maximum CW operation output power at room temperature is 1.48 W. The lateral divergence angle θ‖ and vertical divergence angle θ⊥ are as low as 15.3° and 13.8° without side-lobes at a current of 6 A.

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