Large Aperture Low Threshold Current 980 nm VCSELs Fabricated with Pulsed Anodic Oxidation
- 期刊名字:光机电信息
- 文件大小:
- 论文作者:CUI Jin-jiang,NING Yong-qiang,
- 作者单位:Key Laboratory of Excited State Processes,Graduate School of Chinese Academy of Sciences
- 更新时间:2023-02-15
- 下载次数:次
论文简介
Pulsed anodic oxidation technique, a new way of forming current blocking layers, was successfully used in ridge-waveguide QW laser fabrication. This method was applied in 980 nm VCSELs fabrication to form a high-quality native oxide current blocking layer, which simplifies the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500 μm diameter device has a current threshold as low as 048 W. The maximum CW operation output power at room temperature is 1.48 W. The lateral divergence angle θ‖ and vertical divergence angle θ⊥ are as low as 15.3° and 13.8° without side-lobes at a current of 6 A.
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