Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays
- 期刊名字:半导体学报
- 文件大小:
- 论文作者:王杏华,宋爱民,程文超,李国华,李承芳,李月霞,谭平恒
- 作者单位:National Laboratory for Superlattices and Microstructures
- 更新时间:2022-12-27
- 下载次数:次
论文简介
Two types of GaAs/AlGaAs quantum dot arrays with different dot size are fabricated by dry etching and dry-wet etching. PL spectra of the quantum dot arrays at low temperature show the blue shifts due to the quantization confinement effects, and the blue-shift increases with the decrease of the dot size. It is also found that wet chemical etching can reduce the surface damage caused by high-energy ion etching and improve the optical characteristics of the quantum dot arrays.
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