Microscopic model for chemical etchability along radiation damage paths in solids Microscopic model for chemical etchability along radiation damage paths in solids

Microscopic model for chemical etchability along radiation damage paths in solids

  • 期刊名字:核技术(英文版)
  • 文件大小:
  • 论文作者:Mukhtar Ahmed RANA
  • 作者单位:Physics Division
  • 更新时间:2022-12-26
  • 下载次数:
论文简介

It would be very interesting to develop a picture about removal of atoms from the radiation damaged paths or latent nuclear tracks and undamaged bulk material in track detectors. Here, theory of chemical etching is described briefly and a new model for chemical etching along radiation damaged paths in solids is developed based on basic scientific facts and valid assumptions. Dependence of chemical etching on radiation damage intensity and etching conditions is discussed. A new parameter for etching along radiation damaged paths is introduced, which is useful for investigation of relationship between chemical etchability and radiation damage in a solid. Results and discussion presented here are also useful for further development of nuclear waste immobilization.

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