Stress-strain Analysis of p-type GaN Films Material

The crystal quality of p-GaN film depends on the stress-strain during the process of material growth at a certain extent. A smooth high-quality GaN epitaxial layer was grown on sapphire substrate using standard low-temperature(LT) buffer layer by MOCVD. And by testing analysis of correlative experiments, we found that the stress-strain of p-type GaN could be changed by annealing, enhancing the crystal quality.