Kinetic Monte Carlo simulation of physical vapor deposition of thin Cu film

A two-dimensional Kinetic Monte Carlo method has been developed for simulating the physical vapor deposition of thin Cu films on Cu substrate. An improved embedded atom method was used to calculate the interatomic potential and determine the diffusion barrier energy and residence time. Parameters, including incident angle,deposition rate and substrate temperature, were investigated and discussed in order to find their influences on the thin film morphology.