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IEC TS 62607-6-3-2020 纳米制造--关键控制特性--第6-3部分:石墨烯基材料--晶畴尺寸:基材氧化 Nanomanufacturing – Key control characteristics – Part 6-3: Graphene-based material – Domain size: substrate oxidation IEC TS 62607-6-3-2020 纳米制造--关键控制特性--第6-3部分:石墨烯基材料--晶畴尺寸:基材氧化 Nanomanufacturing – Key control characteristics – Part 6-3: Graphene-based material – Domain size: substrate oxidation

IEC TS 62607-6-3-2020 纳米制造--关键控制特性--第6-3部分:石墨烯基材料--晶畴尺寸:基材氧化 Nanomanufacturing – Key control characteristics – Part 6-3: Graphene-based material – Domain size: substrate oxidation

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  • 标准编号:IEC TS 62607-6-3-2020
  • 标准状态:现行
  • 更新时间:2024-01-13
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标准简介

This part of IEC TS 62607 establishes a standardized method to determine the structural key control characteristic  
– domain size  
for films consisting of graphene grown by chemical vapour deposition (CVD) on copper by 
– substrate oxidation. 
It provides a fast, facile and reliable method to evaluate graphene domains formed on copper foil or copper film for understanding the effect of the graphene domain size on properties of graphene and enhancing the performance of high speed, flexible, and transparent devices using CVD graphene. 
– The domain size determined in accordance with this document will be listed as a key control characteristic in the blank detail specification for graphene IEC 62565-3-1. Domain density is an equivalent measure.  
– The domain size as derived by this method is defined as the mean value of size of the domains in the observed area specified by supplier in terms of cm2 or µm2 .  
– The method is applicable for graphene grown on copper by CVD. The characterization is done on the copper foil before transfer to the final substrate. 
– As the method is destructive, the samples cannot be re-launched into the fabrication process.dition 1.0 2020-10 TECHNICAL SPECIFICATION colour inside Nanomanufacturing – Key control characteristics – Part 6-3: Graphene-based material – Domain size: substrate oxidation IEC TS 62607-6-3:2020-10(en) THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright ? 2020 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in

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