Design and Simulation of the Thin Film Pulse Transformer Design and Simulation of the Thin Film Pulse Transformer

Design and Simulation of the Thin Film Pulse Transformer

  • 期刊名字:中国电子科技
  • 文件大小:
  • 论文作者:LIU Bao-yuan,SHI Yu,WEN Qi-ye
  • 作者单位:School of Microelectronics and Solid-State Electronics
  • 更新时间:2022-11-03
  • 下载次数:
论文简介

A new thin film pulse transformer for using in ISND and ADSL systems has been designed based on a domain wall pinning model, the parameters of nano-magnetic thin film such as permeability and coercivity can be calculated. The main properties of the thin film transformer including the size,parallel inductance, Q value and turn ratio have been simulated and optimized. Simulation results show that the thin film transformer can be fairly operated in a frequency range of 0. 001~20 MHz.

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